| PART |
Description |
Maker |
| STD1HN60K3 STU1HN60K3 |
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK package
|
ST Microelectronics
|
| IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| STQ1HN60K3-AP |
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in TO-92 package
|
ST Microelectronics
|
| STFI13NM60N |
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in I2PAKFP package
|
ST Microelectronics
|
| STF2LN60K3 STD2LN60K3 STU2LN60K3 |
N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in DPAK package
N-channel 600 V, 4typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages
|
ST Microelectronics
STMicroelectronics
|
| STFI10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in I2PAKFP package
|
ST Microelectronics
|
| STI33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in I2PAK package
|
ST Microelectronics
|
| STF24N60M2 STFI24N60M2 |
N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages
|
STMicroelectronics
|
| STW40N60M2 STFI40N60M2 |
N-channel Power MOSFET
N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
|
STMicroelectronics N.V.
|
| SKDH116_12-L100 SKDH116_16-L100 SKDH116 SKDH116/12 |
MOSFET; ID (A): 0.02; VDS (V): 6; Pch : 0.1; |yfs| (S) typ: 0.024; PG (dB) typ: 24; Ciss (pF) typ: 1.75; NF (dB) typ: 1.5; IDSS (mA): -; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| RFP12N06RLE RFD12N06RLESM RFD12N06RLE FN2407 |
From old datasheet system
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N沟道,逻辑电平,功率MOS场效应管) 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
|
| 2SB1114 |
World standard miniature package. High DC current gain hFE=135 to 600.
|
TY Semiconductor Co., Ltd
|
|
